IPB80N03S4L02ATMA1
IPB80N03S4L02ATMA1
Part Number:
IPB80N03S4L02ATMA1
Manufacturer:
International Rectifier (Infineon Technologies)
Description:
MOSFET N-CH 30V 80A TO263-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
56905 Pieces
Delivery Time:
1-2 days
Data sheet:
IPB80N03S4L02ATMA1.pdf

Introduction

IPB80N03S4L02ATMA1 best price and fast delivery.
BOSER Technology is the distributor for IPB80N03S4L02ATMA1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for IPB80N03S4L02ATMA1 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.2V @ 90µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-3-2
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:2.4 mOhm @ 80A, 10V
Power Dissipation (Max):136W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:IPB80N03S4L-02
IPB80N03S4L-02-ND
IPB80N03S4L-02INTR
IPB80N03S4L-02INTR-ND
IPB80N03S4L02ATMA1TR
SP000273282
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:9750pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:140nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Detailed Description:N-Channel 30V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Email:[email protected]

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