| Condition | New and Original |
|---|---|
| Origin | Contact us |
| Distributor | Boser Technology |
| Voltage - Peak Reverse (Max): | Silicon Carbide Schottky |
| Voltage - Forward (Vf) (Max) @ If: | 10A (DC) |
| Voltage - Breakdown: | PG-TO247-3 |
| Series: | thinQ!™ |
| RoHS Status: | Tube |
| Reverse Recovery Time (trr): | No Recovery Time > 500mA (Io) |
| Resistance @ If, F: | 300pF @ 1V, 1MHz |
| Polarization: | TO-247-3 |
| Other Names: | IDW10G65C5 IDW10G65C5-ND SP000937038 |
| Operating Temperature - Junction: | 0ns |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | IDW10G65C5FKSA1 |
| Expanded Description: | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole PG-TO247-3 |
| Diode Configuration: | 400µA @ 650V |
| Description: | DIODE SCHOTTKY 650V 10A TO247-3 |
| Current - Reverse Leakage @ Vr: | 1.7V @ 10A |
| Current - Average Rectified (Io) (per Diode): | 650V |
| Capacitance @ Vr, F: | -55°C ~ 175°C |
| Email: | [email protected] |
