GP1M010A080N
GP1M010A080N
Part Number:
GP1M010A080N
Manufacturer:
Global Power Technologies Group
Description:
MOSFET N-CH 900V 10A TO3PN
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
47246 Pieces
Delivery Time:
1-2 days
Data sheet:
GP1M010A080N.pdf

Introduction

GP1M010A080N best price and fast delivery.
BOSER Technology is the distributor for GP1M010A080N, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for GP1M010A080N by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PN
Series:-
Rds On (Max) @ Id, Vgs:1.05 Ohm @ 5A, 10V
Power Dissipation (Max):312W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-3P-3, SC-65-3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:2336pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:53nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900V
Detailed Description:N-Channel 900V 10A (Tc) 312W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Email:[email protected]

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