FDD10N20LZTM
Part Number:
FDD10N20LZTM
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 200V 7.6A DPAK-3
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
74136 Pieces
Delivery Time:
1-2 days
Data sheet:
FDD10N20LZTM.pdf

Introduction

FDD10N20LZTM best price and fast delivery.
BOSER Technology is the distributor for FDD10N20LZTM, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDD10N20LZTM by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:UniFET™
Rds On (Max) @ Id, Vgs:360 mOhm @ 3.8A, 10V
Power Dissipation (Max):83W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:FDD10N20LZTMCT
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:585pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:16nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):200V
Detailed Description:N-Channel 200V 7.6A (Tc) 83W (Tc) Surface Mount DPAK
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Email:[email protected]

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