FDD10AN06A0-F085
Part Number:
FDD10AN06A0-F085
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 11A D-PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
43638 Pieces
Delivery Time:
1-2 days
Data sheet:
FDD10AN06A0-F085.pdf

Introduction

FDD10AN06A0-F085 best price and fast delivery.
BOSER Technology is the distributor for FDD10AN06A0-F085, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDD10AN06A0-F085 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:10.5 mOhm @ 50A, 10V
Power Dissipation (Max):135W (Tc)
Packaging:Cut Tape (CT)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:FDD10AN06A0-F085CT
FDD10AN06A0_F085CT
FDD10AN06A0_F085CT-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:42 Weeks
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:1840pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:37nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 11A (Ta) 135W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Email:[email protected]

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