FDD107AN06LA0
Part Number:
FDD107AN06LA0
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 60V 10.9A D-PAK
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
94998 Pieces
Delivery Time:
1-2 days
Data sheet:
FDD107AN06LA0.pdf

Introduction

FDD107AN06LA0 best price and fast delivery.
BOSER Technology is the distributor for FDD107AN06LA0, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDD107AN06LA0 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252AA
Series:PowerTrench®
Rds On (Max) @ Id, Vgs:91 mOhm @ 10.9A, 10V
Power Dissipation (Max):25W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:360pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:5.5nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 3.4A (Ta), 10.9A (Tc) 25W (Tc) Surface Mount TO-252AA
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 10.9A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments