FDB86363-F085
FDB86363-F085
Part Number:
FDB86363-F085
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET N-CH 80V 110A TO263
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
63234 Pieces
Delivery Time:
1-2 days
Data sheet:
FDB86363-F085.pdf

Introduction

FDB86363-F085 best price and fast delivery.
BOSER Technology is the distributor for FDB86363-F085, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for FDB86363-F085 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D²PAK (TO-263AB)
Series:Automotive, AEC-Q101, PowerTrench®
Rds On (Max) @ Id, Vgs:2.4 mOhm @ 80A, 10V
Power Dissipation (Max):300W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:FDB86363-F085TR
FDB86363_F085
FDB86363_F085TR
FDB86363_F085TR-ND
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:10000pF @ 40V
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):80V
Detailed Description:N-Channel 80V 110A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB)
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Email:[email protected]

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