CSD16411Q3
Part Number:
CSD16411Q3
Manufacturer:
TI
Description:
MOSFET N-CH 25V 56A 8-SON
[LeadFreeStatus]未找到翻译
Contains lead / RoHS Compliant
Quantity:
55585 Pieces
Delivery Time:
1-2 days
Data sheet:
CSD16411Q3.pdf

Introduction

CSD16411Q3 best price and fast delivery.
BOSER Technology is the distributor for CSD16411Q3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for CSD16411Q3 by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Test:570pF @ 12.5V
Voltage - Breakdown:8-VSON (3.3x3.3)
Vgs(th) (Max) @ Id:10 mOhm @ 10A, 10V
Vgs (Max):4.5V, 10V
Technology:MOSFET (Metal Oxide)
Series:NexFET™
RoHS Status:Tape & Reel (TR)
Rds On (Max) @ Id, Vgs:14A (Ta), 56A (Tc)
Polarization:8-PowerVDFN
Other Names:296-24255-2
CSD16411Q3/2801
CSD16411Q3/2801-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:CSD16411Q3
Input Capacitance (Ciss) (Max) @ Vds:3.8nC @ 4.5V
IGBT Type:+16V, -12V
Gate Charge (Qg) (Max) @ Vgs:2.3V @ 250µA
FET Feature:N-Channel
Expanded Description:N-Channel 25V 14A (Ta), 56A (Tc) 2.7W (Ta) Surface Mount 8-VSON (3.3x3.3)
Drain to Source Voltage (Vdss):-
Description:MOSFET N-CH 25V 56A 8-SON
Current - Continuous Drain (Id) @ 25°C:25V
Capacitance Ratio:2.7W (Ta)
Email:[email protected]

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