APT65GP60L2DQ2G
APT65GP60L2DQ2G
Part Number:
APT65GP60L2DQ2G
Manufacturer:
Microsemi
Description:
IGBT 600V 198A 833W TO264
[LeadFreeStatus]未找到翻译
Lead free / RoHS Compliant
Quantity:
61871 Pieces
Delivery Time:
1-2 days
Data sheet:
APT65GP60L2DQ2G.pdf

Introduction

APT65GP60L2DQ2G best price and fast delivery.
BOSER Technology is the distributor for APT65GP60L2DQ2G, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for APT65GP60L2DQ2G by email, we will give you a best price according your plan.
Our email: [email protected]

Specifications

Condition New and Original
Origin Contact us
Distributor Boser Technology
Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 65A
Test Condition:400V, 65A, 5 Ohm, 15V
Td (on/off) @ 25°C:30ns/90ns
Switching Energy:605µJ (on), 895µJ (off)
Series:POWER MOS 7®
Power - Max:833W
Packaging:Tube
Package / Case:TO-264-3, TO-264AA
Other Names:APT65GP60L2DQ2GMI
APT65GP60L2DQ2GMI-ND
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Type:Standard
IGBT Type:PT
Gate Charge:210nC
Detailed Description:IGBT PT 600V 198A 833W Through Hole
Current - Collector Pulsed (Icm):250A
Current - Collector (Ic) (Max):198A
Email:[email protected]

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