| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Paket Perangkat pemasok: | D²PAK (TO-263) |
| Seri: | - |
| Rds Pada (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Power Disipasi (Max): | 156W (Tc) |
| Pengemasan: | Cut Tape (CT) |
| Paket / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Nama lain: | SIHB12N65E-GE3CT SIHB12N65E-GE3CT-ND |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Status Gratis Memimpin / Status RoHS: | Lead free / RoHS Compliant |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 1224pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| FET Jenis: | N-Channel |
| Fitur FET: | - |
| Drive Voltage (Max Rds On, Min RDS Aktif): | 10V |
| Tiriskan untuk Sumber Tegangan (Vdss): | 650V |
| Detil Deskripsi: | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Current - Continuous Drain (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
