| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Tegangan - Uji: | 13000pF @ 10V |
| Tegangan - Breakdown: | 10-PolarPAK® (L) |
| Vgs (th) (Max) @ Id: | 1.4 mOhm @ 25A, 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Seri: | TrenchFET® |
| Status RoHS: | Tape & Reel (TR) |
| Rds Pada (Max) @ Id, Vgs: | 60A (Tc) |
| Polarisasi: | 10-PolarPAK® (L) |
| Nama lain: | SIE810DF-T1-E3TR SIE810DFT1E3 |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Surface Mount |
| Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 24 Weeks |
| Nomor Bagian Produsen: | SIE810DF-T1-E3 |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 300nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2V @ 250µA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | MOSFET N-CH 20V 60A 10-POLARPAK |
| Current - Continuous Drain (Id) @ 25 ° C: | 20V |
| kapasitansi Ratio: | 5.2W (Ta), 125W (Tc) |
| Email: | [email protected] |
