| Kondisi | New and Original |
|---|---|
| Asal | Contact us |
| Distributor | Boser Technology |
| Tegangan - Uji: | 2050pF @ 25V |
| Tegangan - Breakdown: | TO-220F-3 (Y-Forming) |
| Vgs (th) (Max) @ Id: | 1.55 Ohm @ 4A, 10V |
| Vgs (Max): | 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Seri: | QFET® |
| Status RoHS: | Tube |
| Rds Pada (Max) @ Id, Vgs: | 8A (Tc) |
| Polarisasi: | TO-220-3 Full Pack, Formed Leads |
| Suhu Operasional: | -55°C ~ 150°C (TJ) |
| mount Jenis: | Through Hole |
| Tingkat Sensitivitas Kelembaban (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 23 Weeks |
| Nomor Bagian Produsen: | FQPF8N80CYDTU |
| Kapasitansi Masukan (Ciss) (Max) @ VDS: | 45nC @ 10V |
| IGBT Jenis: | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 5V @ 250µA |
| Fitur FET: | N-Channel |
| Deskripsi yang Diperluas: | N-Channel 800V 8A (Tc) 59W (Tc) Through Hole TO-220F-3 (Y-Forming) |
| Tiriskan untuk Sumber Tegangan (Vdss): | - |
| Deskripsi: | MOSFET N-CH 800V 8A TO-220F |
| Current - Continuous Drain (Id) @ 25 ° C: | 800V |
| kapasitansi Ratio: | 59W (Tc) |
| Email: | [email protected] |
