| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D²PAK (TO-263) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 380 mOhm @ 6A, 10V |
| Power Dissipation (Max): | 156W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | SIHB12N65E-GE3CT SIHB12N65E-GE3CT-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Blyfri Status / RoHS Status: | Lead free / RoHS Compliant |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1224pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 70nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Drevspænding (Maks. RDS On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Detaljeret beskrivelse: | N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263) |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 12A (Tc) |
| Email: | [email protected] |
