| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Spænding - Test: | 13000pF @ 10V |
| Spænding - Opdeling: | 10-PolarPAK® (L) |
| Vgs (th) (Max) @ Id: | 1.4 mOhm @ 25A, 10V |
| Teknologi: | MOSFET (Metal Oxide) |
| Serie: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 60A (Tc) |
| Polarisering: | 10-PolarPAK® (L) |
| Andre navne: | SIE810DF-T1-E3TR SIE810DFT1E3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SIE810DF-T1-E3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 300nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2V @ 250µA |
| FET-funktion: | N-Channel |
| Udvidet beskrivelse: | N-Channel 20V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L) |
| Afløb til Source Voltage (VDSS): | - |
| Beskrivelse: | MOSFET N-CH 20V 60A 10-POLARPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20V |
| Kapacitansforhold: | 5.2W (Ta), 125W (Tc) |
| Email: | [email protected] |
