| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Spænding - Test: | 580pF @ 20V |
| Spænding - Opdeling: | 8-SO |
| Vgs (th) (Max) @ Id: | 20 mOhm @ 10A, 10V |
| Serie: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 9.2A |
| Strøm - Max: | 3.1W |
| Polarisering: | 8-SOIC (0.154", 3.90mm Width) |
| Andre navne: | SI4288DY-T1-GE3TR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 24 Weeks |
| Producentens varenummer: | SI4288DY-T1-GE3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 15nC @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5V @ 250µA |
| FET-funktion: | 2 N-Channel (Dual) |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 40V 9.2A 3.1W Surface Mount 8-SO |
| Afløb til Source Voltage (VDSS): | Logic Level Gate |
| Beskrivelse: | MOSFET 2N-CH 40V 9.2A 8SO |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 40V |
| Email: | [email protected] |
