| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Spænding - Test: | - |
| Spænding - Opdeling: | 6-TSOP |
| Vgs (th) (Max) @ Id: | 125 mOhm @ 2.4A, 4.5V |
| Serie: | TrenchFET® |
| RoHS Status: | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs: | 2A |
| Strøm - Max: | 830mW |
| Polarisering: | SOT-23-6 Thin, TSOT-23-6 |
| Andre navne: | SI3900DV-T1-E3TR SI3900DVT1E3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 15 Weeks |
| Producentens varenummer: | SI3900DV-T1-E3 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 4nC @ 4.5V |
| Gate Charge (Qg) (Max) @ Vgs: | 1.5V @ 250µA |
| FET-funktion: | 2 N-Channel (Dual) |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP |
| Afløb til Source Voltage (VDSS): | Logic Level Gate |
| Beskrivelse: | MOSFET 2N-CH 20V 2A 6-TSOP |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20V |
| Email: | [email protected] |
