| Tilstand | New and Original |
|---|---|
| Oprindelse | Contact us |
| Distributør | Boser Technology |
| Spænding - Peak Reverse (Max): | Silicon Carbide Schottky |
| Spænding - Videresend (Vf) (Max) @ Hvis: | 10A (DC) |
| Spænding - Opdeling: | PG-TO247-3 |
| Serie: | thinQ!™ |
| RoHS Status: | Tube |
| Reverse Recovery Time (trr): | No Recovery Time > 500mA (Io) |
| Modstand @ Hvis, F: | 300pF @ 1V, 1MHz |
| Polarisering: | TO-247-3 |
| Andre navne: | IDW10G65C5 IDW10G65C5-ND SP000937038 |
| Driftstemperatur - Junction: | 0ns |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IDW10G65C5FKSA1 |
| Udvidet beskrivelse: | Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole PG-TO247-3 |
| Diode Konfiguration: | 400µA @ 650V |
| Beskrivelse: | DIODE SCHOTTKY 650V 10A TO247-3 |
| Nuværende - Reverse Lækage @ Vr: | 1.7V @ 10A |
| Nuværende - Gennemsnitlig Rectified (Io) (pr. Diode): | 650V |
| Kapacitans @ Vr, F: | -55°C ~ 175°C |
| Email: | [email protected] |
